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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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QTLP610CPDTR
QTLP610CPDTR
Phototransistors QTLP610CPDTR
onsemi
QTLP610CPDTR
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Optoelectronics
Phototransistors
QTLP610CPDTR.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
PPAPNo
TypeIR Chip
EU RoHSCompliant
MaterialSilicon
MountingSurface Mount
PolarityNPN
ECCN (US)EAR99
PackagingTape and Reel
Pin Count2
AutomotiveNo
Lead ShapeNo Lead
Lens ColorWater Clear
PCB changed2
Part StatusActive
Package Width2
Package Height1
Package Length3
Lens Shape TypeDomed
Supplier PackageSMD
Viewing OrientationSide View
Peak Wavelength (nm)860
Phototransistor TypePhototransistor
Standard Package NameSMD
Fabrication TechnologyNPN Transistor
Maximum Fall Time (ns)15000(Typ)
Maximum Rise Time (ns)15000(Typ)
Maximum Dark Current (nA)100
Maximum Light Current (uA)500(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)3.5
Maximum Power Dissipation (mW)75
Half Intensity Angle Degrees (°)80
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Collector-Emitter Voltage (V)30
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor IR Chip Silicon 860nm 2-Pin SMD T/R
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