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L14G1
L14G1
Phototransistors L14G1
onsemi
L14G1
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Optoelectronics
Phototransistors
L14G1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeChip
EU RoHSCompliant
Diameter5.31
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)3A001.a.2.b
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Package Height6.48
Lens Shape TypeDomed
Supplier PackageTO-18
Viewing OrientationTop View
Peak Wavelength (nm)940
Phototransistor TypePhototransistor
Standard Package NameTO-206-AA
Fabrication TechnologyNPN Transistor
Maximum Dark Current (nA)100
Maximum Light Current (uA)1000(Min)
Number of Channels per Chip1
Maximum Collector Current (mA)2
Maximum Power Dissipation (mW)600
Half Intensity Angle Degrees (°)10
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)45
Maximum Collector-Emitter Saturation Voltage (V)0.4
Description
Phototransistor Chip Silicon 940nm 3-Pin TO-18 Bulk
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