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ZXMN6A07FQTA
ZXMN6A07FQTA
MOSFETs ZXMN6A07FQTA
Diodes Incorporated
ZXMN6A07FQTA
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Diodes, Transistors and Thyristors
MOSFETs
ZXMN6A07FQTA.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT-23
Typical Fall Time (ns)2
Typical Rise Time (ns)1.4
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)806
Typical Gate Charge @ 10V (nC)3.2
Typical Gate Charge @ Vgs (nC)3.2@10V|1.65@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)19.5
Typical Turn-On Delay Time (ns)1.8
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4
Typical Turn-Off Delay Time (ns)4.9
Maximum Diode Forward Voltage (V)0.95
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)0.82
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.67
Typical Reverse Recovery Time (ns)20.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)166@40V
Typical Reverse Recovery Charge (nC)21.3
Maximum Drain Source Resistance (mOhm)250@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)6.9
Maximum Power Dissipation on PCB @ TC=25°C (W)0.806
Typical Reverse Transfer Capacitance @ Vds (pF)8.7@40V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)200
Description
Trans MOSFET N-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R
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