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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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VEC2610-TL-E
VEC2610-TL-E
MOSFETs VEC2610-TL-E
onsemi
VEC2610-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
VEC2610-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width2.3
Package Height0.78(Max)
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageCase VEC
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)52@N Channel|62@P Channel
Typical Rise Time (ns)105@N Channel|53@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ Vgs (nC)7.6@4V@N Channel|8.2@4.5V@P Channel
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)15@N Channel|13@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)50@N Channel|77@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5@N Channel|3@P Channel
Typical Input Capacitance @ Vds (pF)570@10V@N Channel|680@10V@P Channel
Maximum Drain Source Resistance (mOhm)42@4V@N Channel|81@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH Si 20V 4.5A/3A 8-Pin Case VEC T/R
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