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SUD50P10-43L-GE3
SUD50P10-43L-GE3
MOSFETs SUD50P10-43L-GE3
Vishay
SUD50P10-43L-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)100
Typical Rise Time (ns)20|160
Number of Elements per Chip1
Maximum Power Dissipation (mW)6900
Typical Gate Charge @ 10V (nC)106
Typical Gate Charge @ Vgs (nC)106@10V|54@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15|42
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)100|110
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36.4
Typical Input Capacitance @ Vds (pF)4600@50V
Maximum Drain Source Resistance (mOhm)43@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 36.4A 3-Pin(2+Tab) DPAK
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