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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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STH110N10F7-6
STH110N10F7-6
MOSFETs STH110N10F7-6
STMicroelectronics
STH110N10F7-6
--
Diodes, Transistors and Thyristors
MOSFETs
STH110N10F7-6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width8.9(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)21
Typical Rise Time (ns)36
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)72
Typical Gate Charge @ Vgs (nC)72@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)52
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)110
Typical Input Capacitance @ Vds (pF)5117@50V
Maximum Drain Source Resistance (mOhm)6.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 110A 7-Pin(6+Tab) H2PAK T/R
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