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MOSFETs SQM200N04-1M8_GE3
Vishay
SQM200N04-1M8_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 7 |
| Automotive | Yes |
| PCB changed | 6 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.41(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 21 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ 10V (nC) | 206 |
| Typical Gate Charge @ Vgs (nC) | 206@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 26 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 68 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 200 |
| Typical Input Capacitance @ Vds (pF) | 13880@25V |
| Maximum Drain Source Resistance (MOhm) | 1.8@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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