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SQM120P10_10M1LGE3
SQM120P10_10M1LGE3
MOSFETs SQM120P10_10M1LGE3
Vishay
SQM120P10_10M1LGE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveYes
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameTO-263
Typical Fall Time (ns)200
Typical Rise Time (ns)100
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)125
Typical Gate Charge @ Vgs (nC)125@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)120
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Typical Input Capacitance @ Vds (pF)6750@25V
Maximum Drain Source Resistance (mOhm)10.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK
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