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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SQJ570EP-T1_GE3
SQJ570EP-T1_GE3
MOSFETs SQJ570EP-T1_GE3
Vishay
SQJ570EP-T1_GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SQJ570EP-T1_GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveYes
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Typical Fall Time (ns)15@P Channel|17@N Channel
Typical Rise Time (ns)5@P Channel|4@N Channel
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)27000
Typical Gate Charge @ 10V (nC)12|9
Typical Gate Charge @ Vgs (nC)12@10V@P Channel|9@10V@N Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12@P Channel|8@N Channel
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)30@P Channel|20@N Channel
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.5@P Channel|15@N Channel
Typical Input Capacitance @ Vds (pF)480@25V@P Channel|420@25V@N Channel
Maximum Drain Source Resistance (MOhm)146@10V@P Channel|45@10V@N Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 100V 15A/9.5A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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