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SQJ123ELP
SQJ123ELP
MOSFETs SQJ123ELP
Vishay
SQJ123ELP
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Diodes, Transistors and Thyristors
MOSFETs
SQJ123ELP.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET
Typical Fall Time (ns)126
Typical Rise Time (ns)53
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ Vgs (nC)120@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)31
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)181
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)238
Typical Input Capacitance @ Vds (pF)8342@6V
Maximum Drain Source Resistance (mOhm)4@4.5V
Description
Trans MOSFET P-CH 12V 238A T/R
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