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SPP80N08S207
SPP80N08S207
MOSFETs SPP80N08S207
Infineon
SPP80N08S207
--
Diodes, Transistors and Thyristors
MOSFETs
SPP80N08S207.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height9.25
Package Length10
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyOptiMOS
Standard Package NameTO-220
Typical Fall Time (ns)33
Typical Rise Time (ns)34
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)138
Typical Gate Charge @ Vgs (nC)138@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)56
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)4610@25V
Maximum Drain Source Resistance (MOhm)7.4@10V
Description
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB
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