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SPP18P06P
SPP18P06P
MOSFETs SPP18P06P
Infineon
SPP18P06P
--
Diodes, Transistors and Thyristors
MOSFETs
SPP18P06P.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologySIPMOS
Standard Package NameTO-220
Typical Fall Time (ns)11
Typical Rise Time (ns)5.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)81100
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)21@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)230
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)25
Typical Gate to Drain Charge (nC)11
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)4.1
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18.7
Typical Input Capacitance @ Vds (pF)690@25V
Typical Reverse Recovery Charge (nC)139
Maximum Drain Source Resistance (mOhm)130@10V
Description
Trans MOSFET P-CH 60V 18.7A 3-Pin(3+Tab) TO-220
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