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SP000307379
SP000307379
MOSFETs SP000307379
Infineon
SP000307379
--
Diodes, Transistors and Thyristors
MOSFETs
SP000307379.pdf
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyCoolMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)14
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)83000
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)80
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)890@100V
Maximum Drain Source Resistance (MOhm)399@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R
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