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MOSFETs SIZF640DT-T1-GE3
Vishay
SIZF640DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET Gen IV |
| Typical Fall Time (ns) | 6|10 |
| Typical Rise Time (ns) | 45|115 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 4200 |
| Typical Gate Charge @ 10V (nC) | 69 |
| Typical Gate Charge @ Vgs (nC) | 69@10V|30@4.5V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 18|50 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 45|40 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 41 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 5750@20V |
| Maximum Drain Source Resistance (mOhm) | 1.37@10V |
| Description |
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