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MOSFETs SIZ998BDT-T1-GE3
Vishay
SIZ998BDT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.7(Max) |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR EP |
| Maximum IDSS (uA) | 1@Channel 1|200@Channel 2 |
| Process Technology | TrenchFET Gen IV |
| Typical Fall Time (ns) | 12|10@Channel 1|18|10@Channel 2 |
| Typical Rise Time (ns) | 100|20@Channel 1|120|10@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3800@Channel 1|4800@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 12@Channel 1|31.1@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 12@10V|5.7@4.5V@Channel 1|31.1@10V|14.6@4.5V@Channel 2 |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 20|10@Channel 1|30|15@Channel 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 15|20@Channel 1|40|30@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 23.7@Channel 1|36.2@Channel 2 |
| Typical Input Capacitance @ Vds (pF) | 790@15V@Channel 1|2130@15V@Channel 2 |
| Maximum Drain Source Resistance (mOhm) | 4.39@10V@Channel 1|2.4@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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