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MOSFETs SIZ328DT-T1-GE3
Vishay
SIZ328DT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 3 |
| Package Height | 0.75(Max) |
| Package Length | 3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR EP |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 11|66@Channel 1|5|61@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2900@Channel 1|3600@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 4.6@Channel 1|7.5@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V|4.6@10V@Channel 1|3.5@4.5V|7.5@10V@Channel 2 |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Turn-On Delay Time (ns) | 7|13@Channel 1|8|15@Channel 2 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 12|8@Channel 1|15|10@Channel 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11.1@Channel 1|15@Channel 2 |
| Typical Input Capacitance @ Vds (pF) | 325@10V@Channel 1|600@10V@Channel 1 |
| Maximum Drain Source Resistance (mOhm) | 15@10V@Channel 1|10@10V@Channel 2 |
| Description |
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