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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZ270DT-T1-GE3
SIZ270DT-T1-GE3
MOSFETs SIZ270DT-T1-GE3
Vishay
SIZ270DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZ270DT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.3
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAIR-S EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)12@Channel 1|10@Channel 2
Typical Rise Time (ns)40@Channel 1|42@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)4300
Typical Gate Charge @ 10V (nC)13.3
Typical Gate Charge @ Vgs (nC)6.4@4.5V@Channel 1|13.3@10V|6.2@4.5V@Channel 2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)22@Channel 1|20@Channel 2
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24@Channel 1|25@Channel 2
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.1@Channel 1|6.9@Channel 2
Typical Input Capacitance @ Vds (pF)860@50V@Channel 1|845@50V@Channel 2
Maximum Drain Source Resistance (mOhm)37.7@10V@Channel 1|39.4@10V@Channel 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 7.1A/6.9A 8-Pin PowerPAIR-S EP T/R
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