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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIZ200DT-T1-GE3
SIZ200DT-T1-GE3
MOSFETs SIZ200DT-T1-GE3
Vishay
SIZ200DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIZ200DT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.3
Package Height0.75(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAIR EP
Typical Fall Time (ns)7@Channel 1|10@Channel 2
Typical Rise Time (ns)40@Channel 1|42@Channel 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)4300
Typical Gate Charge @ 10V (nC)18.3@Channel 1|20@Channel 2
Typical Gate Charge @ Vgs (nC)18.3@10V@Channel 1|20@10V@Channel 2
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)17@Channel 1|20@Channel 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23@Channel 1|25@Channel 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Typical Input Capacitance @ Vds (pF)1510@15V@Channel 1|1600@15V@Channel 2
Maximum Drain Source Resistance (mOhm)5.5@10V@Channel 1|5.8@10V@Channel 2
Description
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAIR EP T/R
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