Welcome to BEAM! Tel: +86-553-5896615
Language: Help
MOSFETs SIS4608DN-T1-GE3
Vishay
SIS4608DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET Gen IV |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 5|4 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3300 |
| Typical Gate Charge @ 10V (nC) | 11.7 |
| Typical Gate Charge @ Vgs (nC) | 11.7@10V|8.9@7.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 11|10 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 13|14 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12.4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 740@30V |
| Maximum Drain Source Resistance (mOhm) | 11.8@10V |
| Description |
Related products
Inquiry Price
Popular Products
Beam Electronics is a one-stop platform for electronic components from overseas sites under the "BEAM TECHNOLOGY COMPANY LIMITED" (supporting online ordering and trading). Beam Electronics is committed to building an efficient overseas intelligent IC components trading platform, the main business scope of overseas regions! With the wisdom of data-driven services, the company aims to improve procurement efficiency for the midstream and downstream enterprises in the IC industry, and is determined to become a reliable one-stop procurement platform for overseas IC supply chain.
Tel:+86-553-5896615
Email:sales@beamelec.com
Executive offices:Nianshi Industrial Park, No. 19 Qiluoshan Road, Jiujiang District,Wuhu, Anhui Province
8:30am to 12pm and 1:30pm to 6pm, Monday through Friday, UTC/GMT +8.