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MOSFETs SIR580DP-T1-RE3
Vishay
SIR580DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET Gen V |
| Typical Fall Time (ns) | 10|8 |
| Typical Rise Time (ns) | 8|10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6250 |
| Typical Gate Charge @ 10V (nC) | 50.6 |
| Typical Gate Charge @ Vgs (nC) | 37.7@7.5V|50.6@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18|23 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 28|25 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 35.8 |
| Typical Input Capacitance @ Vds (pF) | 4100@40V |
| Maximum Drain Source Resistance (MOhm) | 2.7@10V |
| Description |
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