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SIHW30N60E-GE3
SIHW30N60E-GE3
MOSFETs SIHW30N60E-GE3
Vishay
SIHW30N60E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AD
Maximum IDSS (uA)1
Standard Package NameTO-247
Typical Fall Time (ns)36
Typical Rise Time (ns)32
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)85
Typical Gate Charge @ Vgs (nC)85@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)63
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)2600@100V
Maximum Drain Source Resistance (mOhm)125@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AD
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