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SIHU4N80AE
SIHU4N80AE
MOSFETs SIHU4N80AE
Vishay
SIHU4N80AE
--
Diodes, Transistors and Thyristors
MOSFETs
SIHU4N80AE.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
EU RoHSCompliant
ECCN (US)EAR99
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)25
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)62500
Typical Gate Charge @ 10V (nC)11
Typical Gate Charge @ Vgs (nC)11@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Typical Input Capacitance @ Vds (pF)11@100V
Maximum Drain Source Resistance (mOhm)1440@10V
Description
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) IPAK
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