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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIHS90N65E-E3
SIHS90N65E-E3
MOSFETs SIHS90N65E-E3
Vishay
SIHS90N65E-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHS90N65E-E3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageSuper-247
Maximum IDSS (uA)1
Typical Fall Time (ns)297
Typical Rise Time (ns)152
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Typical Gate Charge @ 10V (nC)394
Typical Gate Charge @ Vgs (nC)394@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)85
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)323
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)87
Typical Input Capacitance @ Vds (pF)11826@100V
Maximum Drain Source Resistance (mOhm)29@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 87A 3-Pin(3+Tab) Super-247 T/R
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