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MOSFETs SIHG080N60E-GE3
Vishay
SIHG080N60E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 96 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 227000 |
| Typical Gate Charge @ 10V (nC) | 42 |
| Typical Gate Charge @ Vgs (nC) | 42@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 31 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 35 |
| Typical Input Capacitance @ Vds (pF) | 2557@100V |
| Maximum Drain Source Resistance (mOhm) | 80@10V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Description |
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