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SIHF520S-GE3
SIHF520S-GE3
MOSFETs SIHF520S-GE3
Vishay
SIHF520S-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHF520S-GE3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)20
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)16(Max)
Typical Gate Charge @ Vgs (nC)16(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.8
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)19
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.2
Typical Input Capacitance @ Vds (pF)360@25V
Maximum Drain Source Resistance (MOhm)270@10V
Description
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) D2PAK
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