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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIHB24N80AE-GE3
SIHB24N80AE-GE3
MOSFETs SIHB24N80AE-GE3
Vishay
SIHB24N80AE-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHB24N80AE-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Typical Fall Time (ns)51
Typical Rise Time (ns)44
Number of Elements per Chip1
Maximum Power Dissipation (mW)208000
Typical Gate Charge @ 10V (nC)59
Typical Gate Charge @ Vgs (nC)59@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)29
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Typical Input Capacitance @ Vds (pF)1836@100V
Maximum Drain Source Resistance (mOhm)184@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 800V 21A
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