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SIHB053N60E
SIHB053N60E
MOSFETs SIHB053N60E
Vishay
SIHB053N60E
--
Diodes, Transistors and Thyristors
MOSFETs
SIHB053N60E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)9
Typical Rise Time (ns)73
Number of Elements per Chip1
Maximum Power Dissipation (mW)278000
Typical Gate Charge @ 10V (nC)61
Typical Gate Charge @ Vgs (nC)61@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)36
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)47
Typical Input Capacitance @ Vds (pF)3722@100V
Maximum Drain Source Resistance (mOhm)54@10V
Description
Trans MOSFET N-CH 600V 47A Tube
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