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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIE806DF-T1-E3
SIE806DF-T1-E3
MOSFETs SIE806DF-T1-E3
Vishay
SIE806DF-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SIE806DF-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count10
AutomotiveNo
PCB changed10
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Dual Gate Quad Source
Package Width5.16
Package Height0.8
Package Length6.15
Product CategoryPower MOSFET
Supplier PackagePolarPAK
Process TechnologyTrenchFET Gen II
Standard Package NamePolarPAK
Typical Fall Time (ns)10|15
Typical Rise Time (ns)160|50
Number of Elements per Chip1
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)165
Typical Gate Charge @ Vgs (nC)165@10V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)125|20
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)85
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-50
Maximum Continuous Drain Current (A)202
Typical Input Capacitance @ Vds (pF)13000@15V
Maximum Drain Source Resistance (mOhm)1.7@10V
Description
Trans MOSFET N-CH Si 30V 202A 10-Pin PolarPAK T/R
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