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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIDR622DP-T1-GE3
SIDR622DP-T1-GE3
MOSFETs SIDR622DP-T1-GE3
Vishay
SIDR622DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIDR622DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height0.54
Package Length5
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6
Typical Rise Time (ns)6|7
Number of Elements per Chip1
Maximum Power Dissipation (mW)6250
Typical Gate Charge @ 10V (nC)27
Typical Gate Charge @ Vgs (nC)27@10V|20.7@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13|16
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)16|18
Maximum Gate Threshold Voltage (V)150
Typical Gate Threshold Voltage (V)7.5|10
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)64.6
Typical Input Capacitance @ Vds (pF)1516@75V
Maximum Drain Source Resistance (mOhm)17.7@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)64.6 (Ta)|56.7 (Tc)
Description
SIDR622DP-T1-GE3 Vishay MOSFETs Transistor N-CH 150V 64.6A 8-Pin PowerPAK SO EP T/R - Arrow.com
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