Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen V |
Typical Fall Time (ns) | 21|22 |
Typical Rise Time (ns) | 16|74 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 7500 |
Typical Gate Charge @ 10V (nC) | 46.9 |
Typical Gate Charge @ Vgs (nC) | 35.1@7.5V|46.9@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 21|17 |
Maximum Drain Source Voltage (V) | 150 |
Typical Turn-Off Delay Time (ns) | 27|29 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 30.8 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 3740@75V |
Maximum Drain Source Resistance (MOhm) | 7.9@10V |
Description |