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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIB411DK-T1-GE3
SIB411DK-T1-GE3
MOSFETs SIB411DK-T1-GE3
Vishay
SIB411DK-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIB411DK-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.75
Package Length1.6
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-75
Typical Fall Time (ns)10|75
Typical Rise Time (ns)10|40
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ Vgs (nC)6@4.5V|10@8V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)95
Typical Turn-On Delay Time (ns)10|5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)45|25
Typical Gate to Drain Charge (nC)1.4
Maximum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.8
Typical Input Capacitance @ Vds (pF)470@10V
Typical Reverse Recovery Charge (nC)10
Maximum Drain Source Resistance (MOhm)66@4.5V
Description
Trans MOSFET P-CH 20V 4.8A 6-Pin PowerPAK SC-75 T/R
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