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MOSFETs SI8901EDB-T2-E1
Vishay
SI8901EDB-T2-E1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual Common Drain |
| Package Width | 1.6(Max) |
| Package Height | 0.36(Max) |
| Package Length | 2.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Micro Foot |
| Process Technology | TrenchFET |
| Standard Package Name | BGA |
| Typical Fall Time (ns) | 9000 |
| Typical Rise Time (ns) | 2200 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 2300 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 1300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.5 |
| Maximum Drain Source Resistance (MOhm) | 60@4.5V |
| Description |
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