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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI8483DB-T2-E1
SI8483DB-T2-E1
MOSFETs SI8483DB-T2-E1
Vishay
SI8483DB-T2-E1
--
Diodes, Transistors and Thyristors
MOSFETs
SI8483DB-T2-E1.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain Triple Source
Package Width0.96
Package Height0.3
Package Length1.46
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameBGA
Typical Fall Time (ns)10
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)2770
Typical Gate Charge @ 10V (nC)43
Typical Gate Charge @ Vgs (nC)43@10V|21@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)40
Maximum Gate Threshold Voltage (V)0.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)1840@6V
Maximum Drain Source Resistance (mOhm)26@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 12V 16A 6-Pin Micro Foot T/R
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