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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI8481DB-T1-E1
SI8481DB-T1-E1
MOSFETs SI8481DB-T1-E1
Vishay
SI8481DB-T1-E1
--
Diodes, Transistors and Thyristors
MOSFETs
SI8481DB-T1-E1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width1.6
Package Length1.6
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Typical Fall Time (ns)110
Typical Rise Time (ns)20|25
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ Vgs (nC)31.2@4.5V|54@8V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)7|16
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)300|400
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.7
Typical Input Capacitance @ Vds (pF)2500@10V
Maximum Drain Source Resistance (mOhm)21@4.5V
Description
Trans MOSFET P-CH 20V 9.7A 4-Pin Micro Foot T/R
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