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MOSFETs SI8481DB-T1-E1
Vishay
SI8481DB-T1-E1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Package Width | 1.6 |
| Package Length | 1.6 |
| Product Category | Power MOSFET |
| Supplier Package | Micro Foot |
| Typical Fall Time (ns) | 110 |
| Typical Rise Time (ns) | 20|25 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Gate Charge @ Vgs (nC) | 31.2@4.5V|54@8V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 7|16 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 300|400 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.7 |
| Typical Input Capacitance @ Vds (pF) | 2500@10V |
| Maximum Drain Source Resistance (mOhm) | 21@4.5V |
| Description |
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