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MOSFETs SI7980DP-T1-E3
Vishay
SI7980DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 5.89 |
| Package Height | 1.07(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Typical Fall Time (ns) | 12@Channel 1|10@Channel 2 |
| Typical Rise Time (ns) | 18 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3100@Channel 1|3400@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 17.5@Channel 1|22.5@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 17.5@10V|8@4.5V@Channel 1|22.5@10V|10.3@4.5V@Channel 2 |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 15@Channel 1|18@Channel 2 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 20@Channel 1|25@Channel 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.8@Channel 1|11@Channel 2 |
| Typical Input Capacitance @ Vds (pF) | 1010@10V@Channel 1|1370@10V@Channel 2 |
| Maximum Drain Source Resistance (MOhm) | 22@10V@Channel 1|15@10V@Channel 2 |
| Description |
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