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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7848BDP-T1-GE3
SI7848BDP-T1-GE3
MOSFETs SI7848BDP-T1-GE3
Vishay
SI7848BDP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7848BDP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10
Typical Rise Time (ns)12|15
Number of Elements per Chip1
Maximum Power Dissipation (mW)4200
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V|15@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)260
Typical Turn-On Delay Time (ns)25|10
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)25|30
Typical Gate to Drain Charge (nC)5.1
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)6.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)2000@20V
Typical Reverse Recovery Charge (nC)26
Maximum Drain Source Resistance (mOhm)9@10V
Description
Trans MOSFET N-CH 40V 16A 8-Pin PowerPAK SO T/R
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