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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7501DN-T1-E3
SI7501DN-T1-E3
MOSFETs SI7501DN-T1-E3
Vishay
SI7501DN-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7501DN-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Common Quad Drain
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)10@N Channel|30@P Channel
Typical Rise Time (ns)15@N Channel|20@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)9@N Channel|12.5@P Channel
Typical Gate Charge @ Vgs (nC)9@10V@N Channel|12.5@10V@P Channel
Maximum Gate Source Voltage (V)±20@N Channel|±25@P Channel
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)20@N Channel|25@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.4
Maximum Drain Source Resistance (mOhm)35@10V@N Channel|51@10V@P Channel
Description
Trans MOSFET N/P-CH 30V 5.4A 8-Pin PowerPAK 1212 T/R
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