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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7491DP-T1-E3
SI7491DP-T1-E3
MOSFETs SI7491DP-T1-E3
Vishay
SI7491DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7491DP-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
Typical Fall Time (ns)90
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ Vgs (nC)56@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)700
Typical Turn-On Delay Time (ns)150
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)120
Typical Gate to Drain Charge (nC)25
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Maximum Drain Source Resistance (MOhm)8.5@10V
Description
Trans MOSFET P-CH 30V 11A 8-Pin PowerPAK SO T/R
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