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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7190DP-T1-GE3
SI7190DP-T1-GE3
MOSFETs SI7190DP-T1-GE3
Vishay
SI7190DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7190DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)9|10
Typical Rise Time (ns)12|14
Number of Elements per Chip1
Maximum Power Dissipation (mW)5400
Typical Gate Charge @ 10V (nC)48
Typical Gate Charge @ Vgs (nC)48@10V|32@6V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21|13
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)24|28
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18.4
Typical Input Capacitance @ Vds (pF)2214@125V
Maximum Drain Source Resistance (mOhm)118@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 250V 18.4A 8-Pin PowerPAK SO T/R
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