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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7106DN-T1-GE3
SI7106DN-T1-GE3
MOSFETs SI7106DN-T1-GE3
Vishay
SI7106DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7106DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)17.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12.5
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (mOhm)6.2@4.5V
Description
Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R
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