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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI5853DDC-T1-E3
SI5853DDC-T1-E3
MOSFETs SI5853DDC-T1-E3
Vishay
SI5853DDC-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI5853DDC-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width1.65
Package Height1.1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Standard Package NameChip FET
Typical Fall Time (ns)10
Typical Rise Time (ns)17
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ Vgs (nC)7.9@8V|4.7@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)21
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)320@10V
Maximum Drain Source Resistance (mOhm)105@4.5V
Description
Trans MOSFET P-CH 20V 4A 8-Pin Chip FET T/R
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