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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI5519DU-T1-GE3
SI5519DU-T1-GE3
MOSFETs SI5519DU-T1-GE3
Vishay
SI5519DU-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI5519DU-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width1.9
Package Height0.8(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackagePowerPAK ChipFET
Standard Package NameChip FET
Typical Fall Time (ns)6@N Channel|8.5@P Channel
Typical Rise Time (ns)15@N Channel|11@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2270
Typical Gate Charge @ 10V (nC)11.65@N Channel|11.7@P Channel
Typical Gate Charge @ Vgs (nC)11.65@10V@N Channel|11.7@10V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)5.5@N Channel|4.5@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)22@N Channel|25@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6@N Channel|4.8@P Channel
Typical Input Capacitance @ Vds (pF)660@10V@N Channel|475@10V@P Channel
Maximum Drain Source Resistance (mOhm)36@4.5V@N Channel|64@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 6A/4.8A 8-Pin PowerPAK ChipFET T/R
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