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MOSFETs SI5504BDC-T1-GE3
Vishay
SI5504BDC-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 1.65 |
| Package Height | 1.1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | Chip FET |
| Process Technology | TrenchFET |
| Standard Package Name | Chip FET |
| Typical Fall Time (ns) | 25@N Channel|10@P Channel |
| Typical Rise Time (ns) | 80@N Channel|60@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Gate Charge @ 10V (nC) | 4.5@N Channel|4.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 4.5@10V|2@4.5V@N Channel|2.2@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15@N Channel|30@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 12@N Channel|10@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.7@N Channel|2.5@P Channel |
| Typical Input Capacitance @ Vds (pF) | 220@15V@N Channel|170@15V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 65@10V@N Channel|140@10V@P Channel |
| Description |
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