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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI5504BDC-T1-E3
SI5504BDC-T1-E3
MOSFETs SI5504BDC-T1-E3
Vishay
SI5504BDC-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI5504BDC-T1-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width1.65
Package Height1.1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Process TechnologyTrenchFET
Standard Package NameChip FET
Typical Fall Time (ns)10@P Channel|25@N Channel
Typical Rise Time (ns)60@P Channel|80@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ 10V (nC)4.5@P Channel|4.5@N Channel
Typical Gate Charge @ Vgs (nC)4.5@10V|2@4.5V@N Channel|2.2@4.5V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30@P Channel|15@N Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)10@P Channel|12@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5@P Channel|3.7@N Channel
Typical Input Capacitance @ Vds (pF)170@15V@P Channel|220@15V@N Channel
Maximum Drain Source Resistance (mOhm)140@10V@P Channel|65@10V@N Channel
Description
Trans MOSFET N/P-CH 30V 3.7A/2.5A 8-Pin Chip FET T/R
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