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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI4888DY-T1-GE3
SI4888DY-T1-GE3
MOSFETs SI4888DY-T1-GE3
Vishay
SI4888DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI4888DY-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)20
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)16.3@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)44
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Maximum Drain Source Resistance (mOhm)7@10V
Description
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
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