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MOSFETs SI4564DY-T1-GE3
Vishay
SI4564DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 9|13@N Channel|14|15@P Channel |
| Typical Rise Time (ns) | 10|15@N Channel|9|40@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 3@N Channel|12.8@P Channel |
| Minimum Gate Resistance (Ohm) | 0.3@N Channel|1.3@P Channel |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 20.5@N Channel|41.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 20.5@10V|9.8@4.5V@N Channel|41.5@10V|21.7@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±16@N Channel|±20@P Channel |
| Typical Output Capacitance (pF) | 120@N Channel|240@P Channel |
| Typical Turn-On Delay Time (ns) | 7|11@N Channel|9|42@P Channel |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Gate Plateau Voltage (V) | 2.2@N Channel|2.8@P Channel |
| Typical Turn-Off Delay Time (ns) | 18|23@N Channel|50|40@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.74@N Channel|0.77@P Channel |
| Typical Gate to Drain Charge (nC) | 2.6@N Channel|9.8@P Channel |
| Maximum Gate Threshold Voltage (V) | 2@N Channel|2.5@P Channel |
| Minimum Gate Threshold Voltage (V) | 0.8@N Channel|1.2@P Channel |
| Typical Gate to Source Charge (nC) | 2.6@N Channel|5.6@P Channel |
| Typical Reverse Recovery Time (ns) | 17@N Channel|30@P Ch |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8@N Channel|7.2@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 855@20V@N Channel|2000@20V@P Channel |
| Typical Reverse Recovery Charge (nC) | 10@N Channel|26@P Ch |
| Maximum Drain Source Resistance (mOhm) | 17.5@10V@N Channel|21@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 16|20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 48@20V@N Channel|202@20V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 8@N Channel|7.2@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 120@N Channel|110@P Channel |
| Description |
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