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SI4410DY,518
SI4410DY,518
MOSFETs SI4410DY,518
NXP
SI4410DY,518
--
Diodes, Transistors and Thyristors
MOSFETs
SI4410DY,518.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.45(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSO
Process TechnologyTMOS
Typical Fall Time (ns)30
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)40
Typical Gate Charge @ Vgs (nC)21.5@5V|40@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13.5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)70
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Maximum Drain Source Resistance (mOhm)13.5@10V
Description
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R
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