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MOSFETs SI4153DY-T1-GE3
Vishay
SI4153DY-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 4(Max) |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Process Technology | TrenchFET Gen III |
| Typical Fall Time (ns) | 15|10 |
| Typical Rise Time (ns) | 10|46 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3100 |
| Typical Gate Charge @ 10V (nC) | 62 |
| Typical Gate Charge @ Vgs (nC) | 31@4.5V|62@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 50|13 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 35|36 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 14.3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 3600@15V |
| Maximum Drain Source Resistance (mOhm) | 9.5@10V |
| Description |
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