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MOSFETs SI3900DV-T1-E3
Vishay
SI3900DV-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.10.00.80 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 1.65 |
| Package Height | 1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | TSOP |
| Process Technology | TrenchFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 30 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1150 |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 48 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Gate to Drain Charge (nC) | 0.4 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Source Charge (nC) | 0.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2 |
| Maximum Drain Source Resistance (mOhm) | 125@4.5V |
| Description |
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