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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI3429EDV-T1-GE3
SI3429EDV-T1-GE3
MOSFETs SI3429EDV-T1-GE3
Vishay
SI3429EDV-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI3429EDV-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.65
Package Height1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageTSOP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)64|58
Typical Rise Time (ns)17|30
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)43.2@4.5V|78.2@8V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)10|35
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)210|174
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)4083@10V
Maximum Drain Source Resistance (mOhm)21@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 20V 8A 6-Pin TSOP
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